Н. А. Феоктистов

Работ: 4

S. I. Vavilov State Optics Institute, St. Petersburg

1. Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

   V. Yu. Zerov, Yu. V. Kulikov, V. G. Malyarov +2

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000171

2. Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix

   V. N. Bogomolov, В. Г. Голубев, Н. Ф. Картенко +6

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000042

3. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   СтатьяThin-Film Transistor TechnologiesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000167

4. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000174