А. В. Медведев

Работ: 2

Physicotechnical Institute

1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

   V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

   СтатьяThin-Film Transistor TechnologiesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000167

2. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

   V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000174