M. A. Remennyĭ

Работ: 3

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Mesa stripe for the 3–3.6 μm range lasers utilizing gadolinium-doped InAsSbP/InGaAsSb double heterostructures

   N. V. Zotova, S. A. Karandashev, B. A. Matveev +3

   СтатьяAdvanced Optical Sensing TechnologiesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000209

2. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000120

3. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000255