V. A. Perevoshchikov

Работ: 1

Scientific-Research Physicotechnical Institute, N. I. Lobachevskii Nizhnii Novgorod State University, Nizhnii Novgorod

1. Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

   V. A. Perevoshchikov, V. D. Skupov

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000058