V.Ya. Bratus

Работ: 1

V. Lashkaryov Institute of Semiconductor

1. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

   Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000091