V. Ivantsov

Работ: 2

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2

   ABIABI:AkademIndex/openalex/2000.article.000164

2. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   СтатьяSemiconductor materials and devicesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000245