J. Staňo

Работ: 1

Joint Institute for Nuclear Research

1. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

   Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000141