John T. Wolan

Работ: 1

University of South Florida

1. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   СтатьяSemiconductor materials and devicesMaterials science forum2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000245