S.I. Lashaev

Работ: 1

Ioffe Institute of RAS

1. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000197