Р. В. Конакова

Работ: 4

Institute for Physics of Semiconductors of the National Academy of Sciences of Ukraine, 45 Prospect Nauki, 03028, Kyiv-28, Ukraine

1. AFM and XRD studies of GaAs surface after anisotropic etching

   N. L. Dmitruk, V.P. Kladko, Р. В. Конакова +1

   СтатьяOptical Coatings and GratingsThe European Physical Journal Applied Physics2004Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.655040

2. Investigation of the electrical characteristics of reteroepitaxial structures as function of microrelief and manufacturing technology features

   N. L. Dmitruk, A. V. Karimov, Р. В. Конакова +2

   Статьяsolar cell performance optimization2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000348

3. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

   И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

   Статьяsolar cell performance optimizationSemiconductors2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000306

4. Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface

   A. A. Akopyan, Kh. N. Bachronov, O. Yu. Borkovskaya +5

   Статьяsolar cell performance optimizationSemiconductors2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000186