Mahkam Halillaev

Работ: 1

Department of Physics, Urganch State University, Urganch, Uzbekistan

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.chapter.000013