D. V. Zhilina

Работ: 2

Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

1. X-ray fluorescence analysis of Ge1–x Se x , As1–x Se x , and Ge1–x–y As y Se x glasses using electronic excitation

   Е. И. Теруков, П. П. Серегин, А. В. Марченко +2

   СтатьяX-ray Spectroscopy and Fluorescence AnalysisSemiconductors2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000217

2. Electron exchange between impurity centers of tin in lead chalcogenides

   А. В. Марченко, D. V. Zhilina, К. У. Бобохужаев +3

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000339