Н. С. Болтовец

Работ: 1

State Enterprise Research Institute “Orion”

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   СтатьяGaN-based semiconductor devices and materialsUkrainian Journal of Physics2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.001077