Zikrillayev Kh. F.

Работ: 1

Tashkent State Technical University, Tashkent, Uzbekistan

1. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   СтатьяSilicon and Solar Cell TechnologiesФизика и техника полупроводников2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.000912