В. М. Ротштейн

Работ: 2

Arifov Institute of Electronics, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, 100125, Tashkent, Uzbekistan

1. Fragmentation of sputtered vanadium and niobium cluster ions, kinetic release and dissociation energy

   Н. Х. Джемилев, В. М. Ротштейн, О. Ф. Тукфатуллин +1

   Статьяnanoparticles nucleation surface interactionsJournal of Analytical Chemistry2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000415

2. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

   Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.002267