Giyos Khamdamov

Работ: 2

Physical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

1. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

   СтатьяAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.001003

2. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   СтатьяCalibration and Measurement TechniquesLow Temperature Physics2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.437743