M. Yu. Fominskii

Работ: 1

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia

1. Structure of Aluminum Films for the Creation of Tunnel Junctions

   М. В. Стрелков, A. M. Chekushkin, A. A. Lomov +3

   СтатьяSurface and Thin Film PhenomenaJournal of Communications Technology and Electronics2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.012180