BE Egamberdiev

Работ: 1

National University -affiliated Research Institute of Semiconductor Physics and Microelectronics, Tashkent, 100057, Republic of Uzbekistan

1. On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon

   BE Egamberdiev, Schaller Kh, Kh Khamidjonov +2

   СтатьяSemiconductor materials and interfacesIgMin Research2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007193