X. B. Ashurov

Работ: 1

Institute of Ion-Plasma and Laser Technologies of Uzbek Academy of Sciences

1. Oxide layer growth on silicon substrates: effects of temperature and surface preparation

   X. B. Ashurov, M. M. Adilov, A. A. Ismatov +1

   СтатьяSemiconductor materials and devices«Узбекский физический журнал»2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.002873