A Scanning Electron Microscope Study of In[sub 1−x]Ga[sub x]P

The SEM has been used to study the crystal perfection and chemical homogeneity of crystals. Secondary electron micrographs were used to study the surface topography and microstructure away from and at inhomogeneities. Chemical and crystallographic data were obtained using the x‐ray wavelength dispersive and energy dispersive analyzers and selected area channeling patterns. The channeling patterns showed that In and Ga can be substituted directly into a common (column III) sublattice without gross distortion of the lattice and without generation of unacceptable levels of structural defects. The crystals were chemically homogeneous (less than 2% maximum) except at or near inclusions.

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