Статья

Electrical properties of bismuth-antimony thin films. III. Quantum size effect

Yu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRYu. V. NikitinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR

Soviet Journal of Low Temperature Physicsjournal1978en

ABI

Аннотация

We investigated the distinctive aspects of the quantum size effect in thin films of Bi1−xSbx alloys. The variations in the resistance ratio R4.2/R300 were studied in specimens of two types: specimens of varying thickness but fixed composition and varying composition but fixed thickness. The effective quasimomentum pzmax, which determines the period of the quantum size oscillations, is shown to be almost insensitive to variations in the thickness. Data for two forms in which the quantum size effect manifested itself in thin films of Bi1−xSbx alloys are used to plot pzmax versus the alloy composition (the direction of the smaller dimension z coincides with the trigonal axis C3).

Темы

Surface and Thin Film Phenomena Semiconductor materials and interfaces Thermodynamic and Structural Properties of Metals and Alloys

Идентификаторы

DOI: 10.1063/10.0029760

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