Статья

Bias current in semiconductors during overcharging of impurity centres

B. B. BaizakovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentR. A. MoominovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentS. H. ShamirzaievS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentA.Ya. YafasovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

physica status solidi (a)journal1981en

ABI

Аннотация

Аннотация отсутствует.

Темы

Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices

Идентификаторы

DOI: 10.1002/pssa.2210670148

Цитирования и источники

Цитирований: 0Использованных источников: 3

Показатели — AkademScholar · Скоро