Diffusion of promethium in silicon

The first investigations have been made on the diffusion of promethium in silicon. In the temperature range from 1100 to 1250 °C the diffusion constant of promethium increases from ∼1×10−13 cm2/s to ∼1.5×10−12 cm2/s. The temperature dependence of the diffusion coefficient can be described by D = 5 x 10−1 exp[-(3.3 eV/kT]cm2/s.

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