<title>Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs</title>

The effect of electron (E = 1.8 MeV), γ-(⁶⁰Co) and X-ray irradiation on the structural and optical properties of a (Ga,Al)As and a (Zn,Cd)Te quantum wells (QWs) grown on semi-insulating (SI) GaAs is studied. The high radiation hardness of the A3B5 QWs (no changes in recombination characteristics) after irradiation up to a dose of approximately 2•10⁹ rad was found, while SI GaAs substrate manifested the standard effect of the charge carrier removal under such irradiation dose. A2B6 quantum-sized structures (QSS) tends to degrade under lower irradiation dose. The emission bands transformation after irradiation up to a dose ≥ 2•10⁹ rad have been observed in ZnTe buffer layer and CdZnTe QWs. The role of Cd diffusion and internal strain in radiation enhanced ternary alloys QW's degradation is discussed. The calculation of PL peak energy shift is presented in assumption of the well profile change as a result of the radiation enhanced Cd diffusion.

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