Работы, цитирующие эту работу

Работ: 1

Работа: The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

1. The rate of surface generation of charge carriers at the semiconductor-glass interface

   С. И. Власов, A. V. Ovsyannikov

   СтатьяSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000317