Статья

Estimation of redistribution of potential in three-barrier structure

A. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. Sh. BoltaevaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanL. Kh. ZoirovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

DOAJ (DOAJ: Directory of Open Access Journals)repository2006uk

ABI

Аннотация

An experimental–computational method is proposed for determining the voltage drops across each junction of a three-barrier structure. The current–voltage characteristics of the blocking junctions are analyzed, and the asymmetries observed in experiments with the three-barrier homo m1–рGaAs–nGaAs–m2 structure are explained. The results can be used to evaluate photosensitivity, frequency properties, and to identify current transport mechanisms under external influences

Темы

Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces Advanced Materials and Semiconductor Technologies

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Показатели — AkademScholar · Скоро