Study of photoelectric characteristics of a microphoto terminal
A. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanU. M. BuzrukovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanM. A. MirdjalilovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. Sh. BoltaevaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The results of a study of the photoelectric characteristics of a microphoto terminal consisting of a photodiode–diode structure with oppositely connected photo- and dark diodes are presented. It is shown that in the photogalvanic mode its parameters undergo insignificant changes, while in the photoreceptive mode it exhibits high photosensitivity. The proposed design of the elements is of interest for switching several photoelectric structures with minimal losses.
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