Работы, цитирующие эту работу

Работ: 1

Работа: Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

1. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

   A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

   СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000339