Работы, цитирующие эту работу

Работ: 3

Работа: On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

1. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

   Gunel Imanova, I. R. Bekpulatov

   СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002486

2. Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +2

   ГлаваSemiconductor materials and interfacesLecture notes in networks and systems2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.551198

3. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.571863