Temperature-induced properties of industrial silicon produced by repeated remelting in a solar furnace
А. С. СаидовPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanA. Yu. LeĭdermanPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanKh. M. SuleimanovPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, UzbekistanR. A. AyukhanovPhysics-Sun Applied Physics Institute, Uzbek Academy of Sciences, Tashkent, Uzbekistan
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Аннотация
The results obtained in studying the temperature-induced properties of silicon produced by the three-, five-, and eightfold melting of industrial silicon KR3 in a solar furnace in air are presented. It is shown that structures with simple ohmic contacts produced from this type of material at temperatures slightly higher than room temperature become generators of current and voltage.
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