Effect of substrate crystal on mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P/GaP structures

The occurrence of mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P structures (0.6 ≤ x ≤ 0.8) depending on their composition and the width of the substrate GaP monocrystal is studied. At given temperatures of layer growth and solid solution compositions, mechanical stresses in a heterostructure are shown to be appreciably weakened due to an increase in GaP substrate bending as the substrate thickness is decreased from 400 to 100 μm.

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