Работы, цитирующие эту работу

Работ: 1

Работа: Highly sensitive photodetector based on ge double-barrier punch-through structure

1. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000896