Работы, цитирующие эту работу

Работ: 3

Работа: Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

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   СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002486

2. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.571863

3. Study of polymer coatings implanted with high-energy ion beams

   B.D. Igamov, A.I. Kamardin, I.Yu Kochemasov +4

   СтатьяPolymer Nanocomposite Synthesis and IrradiationNext Materials2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.004309