Работы, цитирующие эту работу

Работ: 3

Работа: Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

1. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.007102

2. Study of The Process of Formation of Heterostructural Nanofilms MexSiy/Si and GaxMe1-xAs/GaAs by Ion Implantation

   Eshboboyev Sardor Nurbobo Ugli, Tashatov Allanazar Karshievich

   СтатьяIon-surface interactions and analysisJournal of Physical Science2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005323

3. Surface Morphology of Ni/GaAs Thin Films Produced by Ion-Plasma Method

   K.T. Dovranov, Shakhnoza Jurayeva, Muradulla Normuradov +6

   СтатьяSurface Roughness and Optical Measurements2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.010648