Effect of Radiation 60Со on the Photosensitivity of Overcompensated Silicon
Mahmudov Sherzod AxmadovichDocent, Institute of Nuclear Physics of the Academy#R##N# of Sciences of the Republic of Uzbekistan.Tashkent, UzbekistanMirzaraimov Johongir ZokirjonovichPhD student, Namangan technology and engineering institute, #R##N#Namangan, UzbekistanRafikov Avaz KarimjonovichInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
International Journal of Progressive Sciences and Technologies (Medical University Varna)repository2020en
ABI
Аннотация
By measuring the Specific integral current photosensitivity from the dose of -quantum 60 Co, the influence of quantum on the photosensitivity p-Si <P, Cu>, p-Si <P, Ni>, p-Si <B, Ir> and p-Si < B>.It is analyzed that the appearance of band corrugation in compensated silicon is caused by fluctuations in the distribution of impurity atoms over the sample.It was found that the greater the solubility and diffusion coefficient of impurities in silicon, the more K increases.It is proposed that a method of manufacturing photosensors based on p-Si <P, Cu> possessing increased radiation resistance up to a dose of gamma quanta of ~ 10 9 P is proposed.
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