Работы, на которые ссылается эта работа

Работ: 6

Работа: Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

   Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

   Статья2011Цитирований: 11

   ABIABI:AkademIndex/openalex/2026.other.386765

2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

   Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

   Статья2012Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.386763

3. Impact of self-heating effect on the performance of hybrid FinFET

   Rajeev Pankaj Nelapati, K. Sivasankaran

   Статья2018Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.374699

4. Physical origin of negative differential resistance in SOI transistors

   Liam McDaid, Steven Hall, Phil Mellor +2

   Статья1989Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.386766

5. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   СтатьяAdvancements in Semiconductor Devices and Circuit Design2014Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.386764

6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

   Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

   Статья2018Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.386767