Работы, цитирующие эту работу

Работ: 2

Работа: Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

1. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

   СтатьяSilicon Nanostructures and PhotoluminescenceVacuum2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.008005

2. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

   A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

   ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.chapter.000712