Статья

New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

N. F. ZikrillayevTashkent State Technical University, 100095, Tashkent, UzbekistanС. Б. ИсамовTashkent State Technical University, 100095, Tashkent, UzbekistanB. O. IsakovTashkent State Technical University, 100095, Tashkent, UzbekistanTuerdi WumaierXinjiang Institute of Engineering, 830023, Urumchi, ChinaLi LiangXinjiang Institute of Engineering, 830023, Urumchi, ChinaJianbo ZhanXinjiang Institute of Engineering, 830023, Urumchi, ChinaT. XiayimulatiXinjiang Institute of Engineering, 830023, Urumchi, China

Journal of Nano- and Electronic Physicsjournal2023en

ABI

Аннотация

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Темы

Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices

Идентификаторы

DOI: 10.21272/jnep.15(6).06024

Цитирования и источники

Цитирований: 2 Использованных источников: 10

Показатели — AkademScholar · Скоро