Epitaxial Growth of Ge Nanofilms on the Surface of SrF2
S. T. AbraevaTashkent State Technical University named after Islam Karimov, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваTashkent State Technical University named after Islam Karimov, 100095, Tashkent, UzbekistanБ. Е. УмирзаковTashkent State Technical University named after Islam Karimov, 100095, Tashkent, Uzbekistan
ABI
Аннотация
The composition, structure, and optical parameters of a SrF2(111) single-crystal sample with a surface Ge nanofilm are studied using Auger-electron spectroscopy (in combination with surface etching with Ar+ ions and measuring the angular dependences of the coefficient of inelastic electron reflection η) and light-absorption spectroscopy. It is shown for the first time that preliminary bombardment of the SrF2 surface with Ar+ ions with E0 = 1 keV at T = 750 K makes it possible to obtain homogeneous epitaxial Ge nanofilms starting from a thickness of 30 Å. It is assumed that the transition layer formed at the Ge–SrF2 interface also has a cubic lattice with a parameter close to the lattice constants of Ge and SrF2.
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