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Работы, на которые ссылается эта работа

Работ: 83

Работа: High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

  1. Journal of Physics: Conference Series

    Cristiana Bartolomei, Cecilia Mazzoli, Caterina Morganti

    Другое2013Цитирований: 434
    ABI

  2. The missing memristor found

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1

    Статья2008Цитирований: 11
    ABI

  3. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    СтатьяAdvanced Memory and Neural ComputingNanoscale2022Цитирований: 8
    ABI

  4. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6
    ABI

  5. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2023Цитирований: 6
    ABI

  6. Memristive switching mechanism for metal/oxide/metal nanodevices

    J. Joshua Yang, Matthew D. Pickett, Xuema Li +3

    Статья2008Цитирований: 6
    ABI

  7. Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

    Sattam Al Otaibi, Nasir Ilyas, Mohammed Zubair M. Shamim +6

    Статья2021Цитирований: 6
    ABI

  8. Organic and inorganic nanomaterials: fabrication, properties and applications

    Basmah H. Alshammari, Maha M. A. Lashin, Muhammad Adil Mahmood +7

    Обзорная статьяZnO doping and propertiesRSC Advances2023Цитирований: 5
    ABI

  9. Nanoionics-based resistive switching memories

    Rainer Waser, Masakazu Aono

    Статья2007Цитирований: 5
    ABI

  10. Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing

    Sattam Al Otaibi, Shahid Iqbal, Fazal Raziq +3

    Статья2024Цитирований: 5
    ABI

  11. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

    Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

    СтатьяAdvanced Memory and Neural ComputingRSC Advances2024Цитирований: 4
    ABI

  12. Metal–Oxide RRAM

    H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu +6

    Статья2012Цитирований: 4
    ABI

  13. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

    Rainer Waser, Regina Dittmann, G. Staikov +1

    Обзорная статья2009Цитирований: 4
    ABI

  14. Robust Ag/ZrO<sub>2</sub>/WS<sub>2</sub>/Pt Memristor for Neuromorphic Computing

    Xiaobing Yan, Cuiya Qin, Chao Lü +14

    Статья2019Цитирований: 4
    ABI

  15. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

    СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 4
    ABI

  16. Reliable Resistive Switching and Multifunctional Synaptic Behavior in ZnO/NiO Nanocomposite Based Memristors for Neuromorphic Computing

    Sattam Al Otaibi, Fazal Raziq, Iftikhar Ahmad +3

    Статья2024Цитирований: 4
    ABI

  17. Без названия

    ДругоеЦитирований: 3
    ABI

  18. The mechanism of electroforming of metal oxide memristive switches

    J. Joshua Yang, Feng Miao, Matthew D. Pickett +4

    Статья2009Цитирований: 2
    ABI

  19. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

    Johannes Müller, T. S. Böscke, D. Bräuhaus +6

    Статья2011Цитирований: 2
    ABI

  20. Short-Term Synaptic Plasticity

    Robert S. Zucker, Wade G. Regehr

    Обзорная статья2002Цитирований: 2
    ABI

  21. HfO&lt;sub&gt;2&lt;/sub&gt;-Based RRAM: Electrode Effects, Ti/HfO&lt;sub&gt;2&lt;/sub&gt; Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and &lt;italic&gt;Ab Initio&lt;/italic&gt; Calculations

    Boubacar Traoré, P. Blaise, Elisa Vianello +3

    Статья2015Цитирований: 2
    ABI

  22. Emerging Memristive Artificial Synapses and Neurons for Energy‐Efficient Neuromorphic Computing

    Sanghyeon Choi, Jehyeon Yang, Gunuk Wang

    Обзорная статья2020Цитирований: 2
    ABI

  23. The Future of Memristors: Materials Engineering and Neural Networks

    Kaixuan Sun, Jingsheng Chen, Xiaobing Yan

    Статья2020Цитирований: 2
    ABI

  24. Brain‐Inspired Organic Electronics: Merging Neuromorphic Computing and Bioelectronics Using Conductive Polymers

    Imke Krauhausen, Charles‐Théophile Coen, Simone Spolaor +2

    Статья2023Цитирований: 2
    ABI

  25. Advancements in 2D layered material memristors: unleashing their potential beyond memory

    Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan +2

    Статья2024Цитирований: 2
    ABI