Работы, цитирующие эту работу

Работ: 3

Работа: Large‐Size Growth of Ultrathin SnS₂ Nanosheets and High Performance for Phototransistors

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   ABIABI:AkademIndex/openalex/2023.article.000223

2. Broadening spectral responses and achieving environmental stability in SnS₂/Ag-NPs/HfO₂ flexible phototransistors

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   Статья2D Materials and ApplicationsNanoscale2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.243634

3. Gate-controlled rectification and broadband photodetection in a P–N diode based on TMDC heterostructures

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   Статья2D Materials and ApplicationsMaterials Advances2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.108559