Работы, цитирующие эту работу

Работ: 2

Работа: Transistors based on two-dimensional materials for future integrated circuits

1. Revealing Bipolar Photoresponse in Multiheterostructured WTe₂–GaTe/ReSe₂–WTe₂ P–N Diode by Hybrid 2D Contact Engineering

   Ehsan Elahi, Muhammad Rabeel, Bilal Ahmed +11

   Статья2D Materials and ApplicationsACS Applied Materials & Interfaces2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.000289

2. Enhanced near infrared and gate tunable photoresponse of MoSe2 transistor enabled by 2D hetero contact engineering

   Ehsan Elahi, Muhammad Rabeel, Shania Rehman +8

   Статья2D Materials and ApplicationsOptical Materials2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.108561