Работы, цитирующие эту работу

Работ: 5

Работа: Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

1. Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

   Khodjakbar S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2024Цитирований: 11

   ABIABI:AkademIndex/openalex/2024.article.000404

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000275

3. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000320

4. A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination

   Paul Stradins, Michio Kondo, Akihisa Matsuda

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000161

5. On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H

   Paul Stradins, Akihisa Matsuda

   СтатьяThin-Film Transistor TechnologiesMRS Proceedings2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000287