Работы, цитирующие эту работу

Работ: 4

Работа: Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

1. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

   G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Nanomaterials2021Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.110166

2. Modeling the Temperature Dependence of Shubnikov-De Haas Oscillations in Light-Induced Nanostructured Semiconductors

   У. И. Эркабоев, R. G. Rakhimov, J. I. Mirzaev +2

   СтатьяQuantum and electron transport phenomenaEast European Journal of Physics2024Цитирований: 5

   ABIABI:AkademIndex/openalex/2024.article.000798

3. The influence of light on transverse magnetoresistance oscillations in low-dimensional semiconductor structures

   U. I. Erkaboev, G. Gulyamov, M.G. Dadamirzaev +4

   СтатьяSemiconductor Quantum Structures and DevicesIndian Journal of Physics2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001651

4. Modeling the temperature dependence of magneto-optical absorption coefficients in nanostructured semiconductors

   U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

   СтатьяMagneto-Optical Properties and ApplicationsIndian Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006498