Работы, цитирующие эту работу

Работ: 5

Работа: Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

1. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

   Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

   СтатьяX-ray Diffraction in CrystallographyJournal of Crystal Growth2024Цитирований: 8

   ABIABI:AkademIndex/openalex/2024.article.000891

2. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

   Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

   СтатьяSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000878

3. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

   Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

   СтатьяSemiconductor materials and interfacesNext Materials2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009153

4. STUDY of the influence of temperature and gamma radiation on the crystal structure of a thin TiO2 coating obtained on A Si (111) surface

   B.E. Umirzakov, Z.A. Isaxanov, I.R. Bekpulatov +3

   СтатьяChemical and Physical Properties of MaterialsPhysics Letters A2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.004964

5. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

   B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

   СтатьяSemiconductor materials and interfacesSolid State Sciences2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.018655