Работы, цитирующие эту работу

Работ: 2

Работа: A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

1. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7

   ABIABI:AkademIndex/openalex/2025.article.000607

2. Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

   Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3

   СтатьяNanowire Synthesis and ApplicationsEPJ Web of Conferences2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.005835