Работы, цитирующие эту работу

Работ: 3

Работа: Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002520

3. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   СтатьяSemiconductor Quantum Structures and DevicesPhysica Scripta2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002581