Работы, цитирующие эту работу

Работ: 2

Работа: Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   СтатьяSemiconductor Quantum Structures and DevicesPhysica Scripta2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002581