Работы, цитирующие эту работу

Работ: 2

Работа: Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   СтатьяSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter2025Цитирований: 4

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   СтатьяRadiation Effects in ElectronicsPhysica Scripta2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.017583