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Работы, на которые ссылается эта работа
Работ: 27
Работа: Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
Positron Annihilation in Semiconductors
R. Krause‐Rehberg, Hartmut S. Leipner
Книга1999Цитирований: 6ABIProduction of Divacancies and Vacancies by Electron Irradiation of Silicon
Статья1965Цитирований: 3ABIStability of large vacancy clusters in silicon
Torsten E.M. Staab, A. Sieck, M. Haugk +3
Статья2002Цитирований: 2ABIVacancies and vacancy-oxygen complexes in silicon: Positron annihilation with core electrons
J. Kuriplach, A.L. Morales, C. Dauwe +2
Статья1998Цитирований: 2ABIPositron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect
N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3
СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2016Цитирований: 1ABI